standard avalanche sinterglass diode BYW52, byw53, byw54, byw55, byw56 vishay semiconductors www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86049 158 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 25-aug-10 mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? controlled avalanche characteristics ? glass passivated junction ? hermetically sealed package ? low reverse current ? high surge current loading ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? rectification, general purpose 949539 parts table part type differentiation package BYW52 v r = 200 v; i fav = 2 a sod-57 byw53 v r = 400 v; i fav = 2 a sod-57 byw54 v r = 600 v; i fav = 2 a sod-57 byw55 v r = 800 v; i fav = 2 a sod-57 byw56 v r = 1000 v; i fav = 2 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics BYW52 v r = v rrm 200 v byw53 v r = v rrm 400 v byw54 v r = v rrm 600 v byw55 v r = v rrm 800 v byw56 v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 50 a repetitive peak forward current i frm 12 a average forward current ? = 180 i fav 2a pulse avalanche peak power t p = 20 s half sine wave, t j = 175 c p r 1000 w pulse energy in avalanche mode, non repetitive (inductive load switch off) l (br)r = 1 a, t j = 175 c e r 20 mj i 2 t-rating i 2 t8a 2 s junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w
BYW52, byw53, byw54, byw55, byw56 standard avalanche sinterglass diode vishay semiconductors document number: 86049 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 25-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 159 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - typ. thermal re sistance vs. lead length fig. 2 - forward current vs. forward voltage fig. 3 - max. average forward current vs. ambient temperature fig. 4 - reverse current vs. junction temperature electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max unit forward voltage i f = 1 a v f -0.91 v reverse current v r = v rrm i r -0.11a v r = v rrm , t j = 100 c i r - 5 10 a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms v (br) - - 1600 v diode capacitance v r = 4 v, f = 1 mhz c d -18-pf reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr --4s i f = 1 a, di/dt = 5 a/s, v r = 50 v t rr --4s reverse recovery charge l f = 1 a, di/dt = 5 a/s q rr - - 200 nc 0 20 40 80 60 100 120 15 10 5 0 202530 r thja - ther. re s i s t. junction/ambient (k/w) l - lead length (mm) 949101 ll t l = con s tant 0.001 0.01 0.1 1 10 0.0 0.4 0.8 1.2 1.6 16350 v f - forward voltage (v) i f - forward current (a) t j = 25 c t j = 175 c 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 160 180 16351 t amb - ambient temperature (c) i fav - average forward current (a) r thja = 45 k/w l = 10 mm r thja = 100 k/w pcb: d = 25 mm v r = v rrm half s ine wave 1 10 100 1000 25 50 75 100 125 150 175 16352 t j - junction temperature (c) i r - rever s e current (a) v r = v rrm
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86049 160 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 25-aug-10 BYW52, byw53, byw54, byw55, byw56 vishay semiconductors standard avalanche sinterglass diode fig. 5 - max. reverse power dissipation vs. junction te mperature fig. 6 - diode capacitance vs. reverse voltage fig. 7 - thermal response package dimensions in millimeters (inches): sod-57 0 50 100 150 200 250 300 350 400 25 50 75 100 125 150 175 16353 t j - junction temperature (c) p r - rever s e power di ss ipation (mw) v r = v rrm p r - limit at 100 % v r p r - limit at 80 % v r 0 5 10 15 20 25 30 35 40 0.1 1 10 100 16354 v r - rever s e voltage (v) c d - diode capacitance (pf) f = 1 mhz 1 10 100 1000 z thp - thermal resistance for pulse cond. (k/w) t p - pulse length (s) 94 9178 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 i frm - repetitive peak forward current (a) 110 v rrm = 1000 v, r thja = 100 k/w t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 t amb = 25 c t amb = 45 c t amb = 60 c t amb = 70 c t amb = 100 c 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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